Analog sensing of memory cells with a source follower driver in a semiconductor memory device

ABSTRACT

Memory devices, methods, and sample and hold circuits are disclosed, including a memory device that includes a sample and hold circuit coupled to a bit line. One such sample and hold circuit includes a read circuit, a verify circuit, and a reference circuit. The read circuit stores a read threshold voltage that was read from a selected memory cell. The verify circuit stores a target threshold voltage that is compared to the read threshold voltage to generate an inhibit signal when the target and read threshold voltages are substantially equal. The reference circuit stores a reference threshold voltage that can be used to translate the read threshold voltage to compensate for a transistor voltage drop and/or temperature variations.

RELATED APPLICATION

This Application is a Divisional of U.S. application Ser. No.12/049,604, titled “ANALOG SENSING OF MEMORY CELLS WITH A SOURCEFOLLOWER DRIVER IN A SEMICONDUCTOR MEMORY DEVICE” filed Mar. 17, 2008(allowed), which is commonly assigned and incorporated herein byreference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory andmore particularly, in one or more embodiments, to solid statenon-volatile memory devices.

BACKGROUND

Electronic devices commonly have some type of bulk storage deviceavailable to them. A common example is a hard disk drive (HDD). HDDs arecapable of large amounts of storage at relatively low cost, with currentconsumer HDDs available with over one terabyte of capacity.

HDDs generally store data on rotating magnetic media or platters. Datais typically stored as a pattern of magnetic flux reversals on theplatters. To write data to a typical HDD, the platter is rotated at highspeed while a write head floating above the platter generates a seriesof magnetic pulses to align magnetic particles on the platter torepresent the data. To read data from a typical HDD, resistance changesare induced in a magnetoresistive read head as it floats above theplatter rotated at high speed. In practice, the resulting data signal isan analog signal whose peaks and valleys are the result of the magneticflux reversals of the data pattern. Digital signal processing techniquescalled partial response maximum likelihood (PRML) are then used tosample the analog data signal to determine the likely data patternresponsible for generating the data signal.

HDDs have certain drawbacks due to their mechanical nature. HDDs aresusceptible to damage or excessive read/write errors due to shock,vibration or strong magnetic fields. In addition, they are relativelylarge users of power in portable electronic devices.

Another example of a bulk storage device is a solid state drive (SSD).Instead of storing data on rotating media, SSDs utilize semiconductormemory devices to store their data, but include an interface and formfactor making them appear to their host system as if they are a typicalHDD. The memory devices of SSDs are typically non-volatile flash memorydevices.

Flash memory devices have developed into a popular source ofnon-volatile memory for a wide range of electronic applications. Flashmemory devices typically use a one-transistor memory cell that allowsfor high memory densities, high reliability, and low power consumption.Changes in threshold voltage of the cells, through programming of chargestorage nodes (i.e., floating gates, trapping layers or other physicalphenomena), determine the data value of each cell. Common uses for flashmemory and other non-volatile memory include personal computers,personal digital assistants (PDAs), digital cameras, digital mediaplayers, digital recorders, games, appliances, vehicles, wirelessdevices, mobile telephones, and removable memory modules, and the usesfor non-volatile memory continue to expand.

Unlike HDDs, the operation of SSDs is generally not subject tovibration, shock or magnetic field concerns due to their solid statenature. Similarly, without moving parts, SSDs have lower powerrequirements than HDDs. However, SSDs currently have much lower storagecapacities compared to HDDs of the same form factor and a significantlyhigher cost per bit.

For the reasons stated above, and for other reasons which will becomeapparent to those skilled in the art upon reading and understanding thepresent specification, there is a need in the art for alternative bulkstorage options.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified block diagram of a memory device according to anembodiment of the disclosure.

FIG. 2 is a schematic of a portion of an example NAND memory array asmight be found in the memory device of FIG. 1.

FIG. 3 is a block schematic of a solid state bulk storage system inaccordance with one embodiment of the present disclosure.

FIG. 4 is a depiction of a wave form showing conceptually a data signalas might be received from the memory device by a read/write channel inaccordance with an embodiment of the disclosure.

FIG. 5 is a block schematic of an electronic system in accordance withan embodiment of the disclosure.

FIG. 6 is a block diagram of one embodiment of a portion of a memoryarray that incorporates a ramp voltage for sensing and a sample/holdcircuit.

FIG. 7 is a block diagram of one embodiment of the sample and holdcircuit with a source follower driver in accordance with the blockdiagram of FIG. 6.

FIG. 8 is a block diagram of an alternate embodiment of the sample andhold circuit with a source follower driver in accordance with the blockdiagram of FIG. 6.

FIG. 9 is a flowchart of one embodiment of a method for analog sensingin a semiconductor memory device.

DETAILED DESCRIPTION

In the following detailed description of the present embodiments,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration specific embodiments inwhich the embodiments may be practiced. These embodiments are describedin sufficient detail to enable those skilled in the art to practice theinvention, and it is to be understood that other embodiments may beutilized and that process, electrical or mechanical changes may be madewithout departing from the scope of the present disclosure. Thefollowing detailed description is, therefore, not to be taken in alimiting sense.

Traditional solid-state memory devices pass data in the form of binarysignals. Typically, a ground potential represents a first logic level ofa bit of data, e.g., a ‘0 ’ data value, while a supply potentialrepresents a second logic level of a bit of data, e.g., a ‘1 ’ datavalue. A multi-level cell (MLC) may be assigned, for example, fourdifferent threshold voltage (V_(t)) ranges of 200 mV for each range,with each range corresponding to a distinct data state, therebyrepresenting four data values or bit patterns. Typically, a dead spaceor margin of 0.2V to 0.4V is between each range to keep the V_(t)distributions from overlapping. If the V_(t) of the cell is within thefirst range, the cell may be deemed to store a logical 11 state and istypically considered the erased state of the cell. If the V_(t) iswithin the second range, the cell may be deemed to store a logical 10state. If the V_(t) is within the third range, the cell may be deemed tostore a logical 00 state. And if the V_(t) is within the fourth range,the cell may be deemed to store a logical 01 state.

When programming a traditional MLC device as described above, cells aregenerally first erased, as a block, to correspond to the erased state.Following erasure of a block of cells, the least-significant bit (LSB)of each cell is first programmed, if necessary. For example, if the LSBis a 1, then no programming is necessary, but if the LSB is a 0, thenthe V_(t) of the target memory cell is moved from the V_(t) rangecorresponding to the 11 logic state to the V_(t) range corresponding tothe 10 logic state. Following programming of the LSBs, themost-significant bit (MSB) of each cell is programmed in a similarmanner, shifting the V_(t) where necessary. When reading an MLC of atraditional memory device, one or more read operations determinegenerally into which of the ranges the V_(t) of the cell voltage falls.For example, a first read operation may determine whether the V_(t) ofthe target memory cell is indicative of the MSB being a 1 or a 0 while asecond read operation may determine whether the V_(t) of the targetmemory cell in indicative of the LSB being a 1 or a 0. In each case,however, a single bit is returned from a read operation of a targetmemory cell, regardless of how many bits are stored on each cell. Thisproblem of multiple program and read operations becomes increasinglytroublesome as more bits are stored on each MLC. Because each suchprogram or read operation is a binary operation, i.e., each programs orreturns a single bit of information per cell, storing more bits on eachMLC leads to longer operation times.

The memory devices of an illustrative embodiment store data as V_(t)ranges on the memory cells. In contrast to traditional memory devices,however, program and read operations are capable of utilizing datasignals not as discrete bits of MLC data values, but as fullrepresentations of MLC data values, such as their complete bit patterns.For example, in a two-bit MLC device, instead of programming a cell'sLSB and subsequently programming that cell's MSB, a target thresholdvoltage may be programmed representing the bit pattern of those twobits. That is, a series of program and verify operations would beapplied to a memory cell until that memory cell obtained its targetthreshold voltage rather than programming to a first threshold voltagefor a first bit, shifting to a second threshold voltage for a secondbit, etc. Similarly, instead of utilizing multiple read operations todetermine each bit stored on a cell, the threshold voltage of the cellmay be determined and passed as a single signal representing thecomplete data value or bit pattern of the cell. The memory devices ofthe various embodiments do not merely look to whether a memory cell hasa threshold voltage above or below some nominal threshold voltage as isdone in traditional memory devices. Instead, a voltage signal isgenerated that is representative of the actual threshold voltage of thatmemory cell across the continuum of possible threshold voltages. Anadvantage of this approach becomes more significant as the bits per cellcount is increased. For example, if the memory cell were to store eightbits of information, a single read operation would return a singleanalog data signal representative of eight bits of information.

FIG. 1 is a simplified block diagram of a memory device 101 according toan embodiment of the disclosure. Memory device 101 includes an array ofmemory cells 104 arranged in rows and columns. Although the variousembodiments will be described primarily with reference to NAND memoryarrays, the various embodiments are not limited to a specificarchitecture of the memory array 104. Some examples of other arrayarchitectures suitable for the present embodiments include NOR arrays,AND arrays, and virtual ground arrays. In general, however, theembodiments described herein are adaptable to any array architecturepermitting generation of a data signal indicative of the thresholdvoltage of each memory cell.

A row decode circuitry 108 and a column decode circuitry 110 areprovided to decode address signals provided to the memory device 101.Address signals are received and decoded to access memory array 104.Memory device 101 also includes input/output (I/O) control circuitry 112to manage input of commands, addresses and data to the memory device 101as well as output of data and status information from the memory device101. An address register 114 is coupled between I/O control circuitry112 and row decode circuitry 108 and column decode circuitry 110 tolatch the address signals prior to decoding. A command register 124 iscoupled between I/O control circuitry 112 and control logic 116 to latchincoming commands. Control logic 116 controls access to the memory array104 in response to the commands and generates status information for theexternal processor 130. The control logic 116 is coupled to row decodecircuitry 108 and column decode circuitry 110 to control the row decodecircuitry 108 and column decode circuitry 110 in response to theaddresses.

Control logic 116 is also coupled to a sample and hold circuitry 118.The sample and hold circuitry 118 latches data, either incoming oroutgoing, in the form of analog voltage levels. For example, the sampleand hold circuitry could contain capacitors or other analog storagedevices for sampling either an incoming voltage signal representing datato be written to a memory cell or an outgoing voltage signal indicativeof the threshold voltage sensed from a memory cell. The sample and holdcircuitry 118 may further provide for amplification and/or buffering ofthe sampled voltage to provide a stronger data signal to an externaldevice.

The handling of analog voltage signals may take an approach similar toan approach well known in the area of CMOS imager technology, wherecharge levels generated at pixels of the imager in response to incidentillumination are stored on capacitors. These charge levels are thenconverted to voltage signals using a differential amplifier with areference capacitor as a second input to the differential amplifier. Theoutput of the differential amplifier is then passed to analog-to-digitalconversion (ADC) devices to obtain a digital value representative of anintensity of the illumination. In the present embodiments, a charge maybe stored on a capacitor in response to subjecting it to a voltage levelindicative of an actual or target threshold voltage of a memory cell forreading or programming, respectively, the memory cell. This charge couldthen be converted to an analog voltage using a differential amplifierhaving a grounded input or other reference signal as a second input. Theoutput of the differential amplifier could then be passed to the I/Ocontrol circuitry 112 for output from the memory device, in the case ofa read operation, or used for comparison during one or more verifyoperations in programming the memory device. It is noted that the I/Ocontrol circuitry 112 could optionally include analog-to-digitalconversion functionality and digital-to-analog conversion (DAC)functionality to convert read data from an analog signal to a digitalbit pattern and to convert write data from a digital bit pattern to ananalog signal such that the memory device 101 could be adapted forcommunication with either an analog or digital data interface.

During a write operation, target memory cells of the memory array 104are programmed until voltages indicative of their V_(t) levels match thelevels held in the sample and hold circuitry 118. This can beaccomplished, as one example, using differential sensing devices tocompare the held voltage level to a threshold voltage of the targetmemory cell. Much like traditional memory programming, programmingpulses could be applied to a target memory cell to increase itsthreshold voltage until reaching or exceeding the desired value. In aread operation, the V_(t) levels of the target memory cells are passedto the sample and hold circuitry 118 for transfer to an externalprocessor (not shown in FIG. 1) either directly as analog signals or asdigitized representations of the analog signals depending upon whetherADC/DAC functionality is provided external to, or within, the memorydevice.

Threshold voltages of cells may be determined in a variety of manners.For example, a word line voltage could be sampled at the point when thetarget memory cell becomes activated. Alternatively, a boosted voltagecould be applied to a first source/drain side of a target memory cell,and the threshold voltage could be taken as a difference between itscontrol gate voltage and the voltage at its other source/drain side. Bycoupling the voltage to a capacitor, charge would be shared with thecapacitor to store the sampled voltage. Note that the sampled voltageneed not be equal to the threshold voltage, but merely indicative ofthat voltage. For example, in the case of applying a boosted voltage toa first source/drain side of the memory cell and a known voltage to itscontrol gate, the voltage developed at the second source/drain side ofthe memory cell could be taken as the data signal as the developedvoltage is indicative of the threshold voltage of the memory cell.

Sample and hold circuitry 118 may include caching, i.e., multiplestorage locations for each data value, such that the memory device 101may be reading a next data value while passing a first data value to theexternal processor, or receiving a next data value while writing a firstdata value to the memory array 104. A status register 122 is coupledbetween I/O control circuitry 112 and control logic 116 to latch thestatus information for output to the external processor.

Memory device 101 receives control signals at control logic 116 over acontrol link 132. The control signals may include a chip enable CE#, acommand latch enable CLE, an address latch enable ALE, and a writeenable WE#. Memory device 101 may receive commands (in the form ofcommand signals), addresses (in the form of address signals), and data(in the form of data signals) from an external processor over amultiplexed input/output (I/O) bus 134 and output data to the externalprocessor over I/O bus 134.

In a specific example, commands are received over input/output (I/O)pins [7:0] of I/O bus 134 at I/O control circuitry 112 and are writteninto command register 124. The addresses are received over input/output(I/O) pins [7:0] of bus 134 at I/O control circuitry 112 and are writteninto address register 114. The data may be received over input/output(I/O) pins [7:0] for a device capable of receiving eight parallelsignals, or input/output (I/O) pins [15:0] for a device capable ofreceiving sixteen parallel signals, at I/O control circuitry 112 and aretransferred to sample and hold circuitry 118. Data also may be outputover input/output (I/O) pins [7:0] for a device capable of transmittingeight parallel signals or input/output (I/O) pins [15:0] for a devicecapable of transmitting sixteen parallel signals. It will be appreciatedby those skilled in the art that additional circuitry and signals can beprovided, and that the memory device of FIG. 1 has been simplified tohelp focus on the embodiments of the disclosure. Additionally, while thememory device of FIG. 1 has been described in accordance with popularconventions for receipt and output of the various signals, it is notedthat the various embodiments are not limited by the specific signals andI/O configurations described unless expressly noted herein. For example,command and address signals could be received at inputs separate fromthose receiving the data signals, or data signals could be transmittedserially over a single I/O line of I/O bus 134. Because the data signalsrepresent bit patterns instead of individual bits, serial communicationof an 8-bit data signal could be as efficient as parallel communicationof eight signals representing individual bits.

FIG. 2 is a schematic of a portion of an example NAND memory array 200as might be found in the memory array 104 of FIG. 1. As shown in FIG. 2,the memory array 200 includes word lines 202 ₁ to 202 _(N) andintersecting bit lines 204 ₁ to 204 _(M). For ease of addressing in thedigital environment, the number of word lines 202 and the number of bitlines 204 are generally each some power of two.

Memory array 200 includes NAND strings 206 ₁ to 206 _(M). Each NANDstring includes transistors 208 ₁ to 208 _(N), each located at anintersection of a word line 202 and a bit line 204. The transistors 208,depicted as floating-gate transistors in FIG. 2, represent non volatilememory cells for storage of data. The floating-gate transistors 208 ofeach NAND string 206 are connected in series source to drain between oneor more source select gates 210, e.g., a field-effect transistor (FET),and one or more drain select gates 212, e.g., an FET. Each source selectgate 210 is located at an intersection of a local bit line 204 and asource select line 214, while each drain select gate 212 is located atan intersection of a local bit line 204 and a drain select line 215.

A source of each source select gate 210 is connected to a common sourceline 216. The drain of each source select gate 210 is connected to thesource of the first floating-gate transistor 208 of the correspondingNAND string 206. For example, the drain of source select gate 210 ₁ isconnected to the source of floating-gate transistor 208 ₁ of thecorresponding NAND string 206 ₁. A control gate of each source selectgate 210 is connected to source select line 214. If multiple sourceselect gates 210 are utilized for a given NAND string 206, they would becoupled in series between the common source line 216 and the firstfloating-gate transistor 208 of that NAND string 206.

The drain of each drain select gate 212 is connected to a local bit line204 for the corresponding NAND string at a drain contact. For example,the drain of drain select gate 212 ₁ is connected to the local bit line204 ₁ for the corresponding NAND string 206 ₁ at a drain contact. Thesource of each drain select gate 212 is connected to the drain of thelast floating-gate transistor 208 of the corresponding NAND string 206.For example, the source of drain select gate 212 ₁ is connected to thedrain of floating-gate transistor 208 _(N) of the corresponding NANDstring 206 ₁. If multiple drain select gates 212 are utilized for agiven NAND string 206, they would be coupled in series between thecorresponding bit line 204 and the last floating-gate transistor 208_(N) of that NAND string 206.

Typical construction of floating-gate transistors 208 includes a source230 and a drain 232, a floating gate 234, and a control gate 236, asshown in FIG. 2. Floating-gate transistors 208 have their control gates236 coupled to a word line 202. A column of the floating-gatetransistors 208 are those NAND strings 206 coupled to a given local bitline 204. A row of the floating-gate transistors 208 are thosetransistors commonly coupled to a given word line 202. Other forms oftransistors 208 may also be utilized with embodiments of the disclosure,such as NROM, magnetic or ferroelectric transistors and othertransistors capable of being programmed to assume one of two or morethreshold voltage ranges.

Memory devices of the various embodiments may be advantageously used inbulk storage devices. For various embodiments, these bulk storagedevices may take on the same form factor and communication bus interfaceof traditional HDDs, thus allowing them to replace such drives in avariety of applications. Some common form factors for HDDs include the3.5″, 2.5″ and PCMCIA (Personal Computer Memory Card InternationalAssociation) form factors commonly used with current personal computersand larger digital media recorders, as well as 1.8″ and 1″ form factorscommonly used in smaller personal appliances, such as mobile telephones,personal digital assistants (PDAs) and digital media players. Somecommon bus interfaces include universal serial bus (USB), AT attachmentinterface (ATA) [also known as integrated drive electronics or IDE],serial ATA (SATA), small computer systems interface (SCSI) and theInstitute of Electrical and Electronics Engineers (IEEE) 1394 standard.While a variety of form factors and communication interfaces werelisted, the embodiments are not limited to a specific form factor orcommunication standard. Furthermore, the embodiments need not conform toa HDD form factor or communication interface. FIG. 3 is a blockschematic of a solid state bulk storage device 300 in accordance withone embodiment of the present disclosure.

The bulk storage device 300 includes a memory device 301 in accordancewith an embodiment of the disclosure, a read/write channel 305 and acontroller 310. The read/write channel 305 provides foranalog-to-digital conversion of data signals received from the memorydevice 301 as well as digital-to-analog conversion of data signalsreceived from the controller 310. The controller 310 provides forcommunication between the bulk storage device 300 and an externalprocessor (not shown in FIG. 3) through bus interface 315. It is notedthat the read/write channel 305 could service one or more additionalmemory devices, as depicted by memory device 301′ in dashed lines.Selection of a single memory device 301 for communication can be handledthrough a multi-bit chip enable signal or other multiplexing scheme.

The memory device 301 is coupled to a read/write channel 305 through ananalog interface 320 and a digital interface 325. The analog interface320 provides for the passage of analog data signals between the memorydevice 301 and the read/write channel 305 while the digital interface325 provides for the passage of control signals, command signals andaddress signals from the read/write channel 305 to the memory device301. The digital interface 325 may further provide for the passage ofstatus signals from the memory device 301 to the read/write channel 305.The analog interface 320 and the digital interface 325 may share signallines as noted with respect to the memory device 101 of FIG. 1. Althoughthe embodiment of FIG. 3 depicts a dual analog/digital interface to thememory device, functionality of the read/write channel 305 couldoptionally be incorporated into the memory device 301 as discussed withrespect to FIG. 1 such that the memory device 301 communicates directlywith the controller 310 using only a digital interface for passage ofcontrol signals, command signals, status signals, address signals anddata signals.

The read/write channel 305 is coupled to the controller 310 through oneor more interfaces, such as a data interface 330 and a control interface335. The data interface 330 provides for the passage of digital datasignals between the read/write channel 305 and the controller 310. Thecontrol interface 335 provides for the passage of control signals,command signals and address signals from the controller 310 to theread/write channel 305. The control interface 335 may further providefor the passage of status signals from the read/write channel 305 to thecontroller 310. Status and command/control signals may also be passeddirectly between the controller 310 and the memory device 301 asdepicted by the dashed line connecting the control interface 335 to thedigital interface 325.

Although depicted as two distinct devices in FIG. 3, the functionalityof the read/write channel 305 and the controller 310 could alternativelybe performed by a single integrated circuit device. And whilemaintaining the memory device 301 as a separate device would providemore flexibility in adapting the embodiments to different form factorsand communication interfaces, because it is also an integrated circuitdevice, the entire bulk storage device 300 could be fabricated as asingle integrated circuit device.

The read/write channel 305 is a signal processor adapted to at leastprovide for conversion of a digital data stream to an analog data streamand vice versa. A digital data stream provides data signals in the formof binary voltage levels, i.e., a first voltage level indicative of abit having a first binary data value, e.g., 0, and a second voltagelevel indicative of a bit having a second binary data value, e.g., 1. Ananalog data stream provides data signals in the form of analog voltageshaving more than two levels, with different voltage levels or rangescorresponding to different bit patterns of two or more bits. Forexample, in a system adapted to store two bits per memory cell, a firstvoltage level or range of voltage levels of an analog data stream couldcorrespond to a bit pattern of 11, a second voltage level or range ofvoltage levels of an analog data stream could correspond to a bitpattern of 10, a third voltage level or range of voltage levels of ananalog data stream could correspond to a bit pattern of 00 and a fourthvoltage level or range of voltage levels of an analog data stream couldcorrespond to a bit pattern of 01. Thus, one analog data signal inaccordance with the various embodiments would be converted to two ormore digital data signals, and vice versa.

In practice, control and command signals are received at the businterface 315 for access of the memory device 301 through the controller310. Addresses and data values may also be received at the bus interface315 depending upon what type of access is desired, e.g., write, read,format, etc. In a shared bus system, the bus interface 315 would becoupled to a bus along with a variety of other devices. To directcommunications to a specific device, an identification value may beplaced on the bus indicating which device on the bus is to act upon asubsequent command. If the identification value matches the value takenon by the bulk storage device 300, the controller 310 would then acceptthe subsequent command at the bus interface 315. If the identificationvalue did not match, the controller 310 would ignore the subsequentcommunication. Similarly, to avoid collisions on the bus, the variousdevices on a shared bus may instruct other devices to cease outboundcommunication while they individually take control of the bus. Protocolsfor bus sharing and collision avoidance are well known and will not bedetailed herein. The controller 310 then passes the command, address anddata signals on to the read/write channel 305 for processing. Note thatthe command, address and data signals passed from the controller 310 tothe read/write channel 305 need not be the same signals received at thebus interface 315. For example, the communication standard for the businterface 315 may differ from the communication standard of theread/write channel 305 or the memory device 301. In this situation, thecontroller 310 may translate the commands and/or addressing scheme priorto accessing the memory device 301. In addition, the controller 310 mayprovide for load leveling within the one or more memory devices 301,such that physical addresses of the memory devices 301 may change overtime for a given logical address. Thus, the controller 310 would map thelogical address from the external device to a physical address of atarget memory device 301.

For write requests, in addition to the command and address signals, thecontroller 310 would pass digital data signals to the read/write channel305. For example, for a 16-bit data word, the controller 310 would pass16 individual signals having a first or second binary logic level. Theread/write channel 305 would then convert the digital data signals to ananalog data signal representative of the bit pattern of the digital datasignals. To continue with the foregoing example, the read/write channel305 would use a digital-to-analog conversion to convert the 16individual digital data signals to a single analog signal having apotential level indicative of the desired 16-bit data pattern. For oneembodiment, the analog data signal representative of the bit pattern ofthe digital data signals is indicative of a desired threshold voltage ofthe target memory cell. However, in programming of a one-transistormemory cells, it is often the case that programming of neighboringmemory cells will increase the threshold voltage of previouslyprogrammed memory cells. Thus, for another embodiment, the read/writechannel 305 can take into account these types of expected changes in thethreshold voltage, and adjust the analog data signal to be indicative ofa threshold voltage lower than the final desired threshold voltage.After conversion of the digital data signals from the controller 310,the read/write channel 305 would then pass the write command and addresssignals to the memory device 301 along with the analog data signals foruse in programming the individual memory cells. Programming can occur ona cell-by-cell basis, but is generally performed for a page of data peroperation. For a typical memory array architecture, a page of dataincludes every other memory cell coupled to a word line.

For read requests, the controller would pass command and address signalsto the read/write channel 305. The read/write channel 305 would pass theread command and address signals to the memory device 301. In response,after performing the read operation, the memory device 301 would returnthe analog data signals indicative of the threshold voltages of thememory cells defined by the address signals and the read command. Thememory device 301 may transfer its analog data signals in parallel orserial fashion.

The analog data signals may also be transferred not as discrete voltagepulses, but as a substantially continuous stream of analog signals. Inthis situation, the read/write channel 305 may employ signal processingsimilar to that used in HDD accessing called PRML or partial response,maximum likelihood. In PRML processing of a traditional HDD, the readhead of the HDD outputs a stream of analog signals representative offlux reversals encountered during a read operation of the HDD platter.Rather than attempting to capture the true peaks and valleys of thisanalog signal generated in response to flux reversals encountered by theread head, the signal is periodically sampled to create a digitalrepresentation of the signal pattern. This digital representation canthen be analyzed to determine the likely pattern of flux reversalsresponsible for generation of the analog signal pattern. This same typeof processing can be utilized with embodiments of the presentdisclosure. By sampling the analog signal from the memory device 301,PRML processing can be employed to determine the likely pattern ofthreshold voltages responsible for generation of the analog signal.

FIG. 4 is a depiction of a wave form showing conceptually a data signal450 as might be received from the memory device 301 by the read/writechannel 305 in accordance with an embodiment of the disclosure. The datasignal 450 could be periodically sampled and a digital representation ofthe data signal 450 can be created from the amplitudes of the sampledvoltage levels. For one embodiment, the sampling could be synchronizedto the data output such that sampling occurs during the steady-stateportions of the data signal 450. Such an embodiment is depicted by thesampling as indicated by the dashed lines at times t1, t2, t3 and t4.However, if synchronized sampling becomes misaligned, values of the datasamples may be significantly different than the steady-state values. Inan alternate embodiment, sampling rates could be increased to allowdetermination of where steady-state values likely occurred, such as byobserving slope changes indicated by the data samples. Such anembodiment is depicted by the sampling as indicated by the dashed linesat times t5, t6, t7 and t8, where a slope between data samples at timest6 and t7 may indicate a steady-state condition. In such an embodiment,a trade-off is made between sampling rate and accuracy of therepresentation. Higher sampling rates lead to more accuraterepresentations, but also increase processing time. Regardless ofwhether sampling is synchronized to the data output or more frequentsampling is used, the digital representation can then be used to predictwhat incoming voltage levels were likely responsible for generating theanalog signal pattern. In turn, the likely data values of the individualmemory cells being read can be predicted from this expected pattern ofincoming voltage levels.

Recognizing that errors will occur in the reading of data values fromthe memory device 301, the read/write channel 305 may include errorcorrection. Error correction is commonly used in memory devices, as wellas HDDs, to recover from expected errors. Typically, a memory devicewill store user data in a first set of locations and error correctioncode (ECC) in a second set of locations. During a read operation, boththe user data and the ECC are read in response to a read request of theuser data. Using known algorithms, the user data returned from the readoperation is compared to the ECC. If the errors are within the limits ofthe ECC, the errors will be corrected.

FIG. 5 is a block schematic of an electronic system in accordance withan embodiment of the disclosure. Example electronic systems may includepersonal computers, PDAs, digital cameras, digital media players,digital recorders, electronic games, appliances, vehicles, wirelessdevices, mobile telephones and the like.

The electronic system includes a host processor 500 that may includecache memory 502 to increase the efficiency of the processor 500. Theprocessor 500 is coupled to a communication bus 504. A variety of otherdevices may be coupled to the communication bus 504 under control of theprocessor 500. For example, the electronic system may include randomaccess memory (RAM) 506; one or more input devices 508 such askeyboards, touch pads, pointing devices, etc.; an audio controller 510;a video controller 512; and one or more bulk storage devices 514. Atleast one bulk storage device 514 includes a digital bus interface 515for communication with the bus 504, one or more memory devices inaccordance with an embodiment of the disclosure having an analoginterface for transfer of data signals representative of data patternsof two or more bits of data, and a signal processor adapted to performdigital-to-analog conversion of digital data signals received from thebus interface 515 and analog-to-digital conversion of analog datasignals received from its memory device(s).

As memory devices transition to using analog signals as described above,methods are needed to discriminate between the information contained inthe analog signals that can be stored in a memory cell. Each voltageprogrammed on a memory cell can be used to represent a logical state ofthat cell (e.g., 011) and typically have a granularity measured intenths or hundredths of volts.

Operational amplifiers have typically been used to drive output signalsin memory devices. However, operational amplifiers require large amountsof current and take up considerable integrated circuit real estate. Thepresent embodiments use a transistor configured as a source follower asthe output data driver. Such a configuration can use less current thanan operational amplifier and requires less real estate.

FIG. 6 illustrates a block diagram of one embodiment of a portion of amemory array having a sensing circuit that includes a sample and holdcircuit. For purposes of clarity, the diagram shows only three seriesstrings 601-603 of memory cells (e.g., floating gate non-volatile cells)that are connected to transfer lines (e.g., bit lines) 621-623. Asdiscussed previously with reference to FIG. 2, a typical series stringof memory cells is comprised of 32 memory cells connected in series andconnected to a bit line. A memory device can be comprised of a largenumber of the illustrated series strings.

In illustrating the operation of the method of FIG. 9, the programmingof only one cell 611 of word line 15 (WL15) will be discussed. In atypical programming operation, one or more cells 611-613 along aselected select line (e.g., word line) can be programmed substantiallysimultaneously since they are being biased by the same word linevoltage. The bit line biasing determines which particular memory cell611-613 is enabled for programming.

The circuit of FIG. 6 includes a word line voltage generator 600 that isresponsible for generating the word line biasing for the programming,read, and verify operations. In one embodiment, the voltage generator600 is coupled to either an on-chip controller or an external controller(not shown) that instructs the generator 600 to set to a desiredvoltage. The voltage generator 600 is able to generate the incrementallyincreasing programming pulses as well as the ramp read voltageillustrated in FIG. 6 and described subsequently.

A bit line current sensing circuit 631-633 is coupled to each bit line621-623. The current sensing circuit 631-633 generates a control signal,to its respective sample and hold circuit 641-643, that indicates when acurrent, I_(bias), is detected on a respective bit line 621-623. Thecurrent sensing circuit 631-633 can be a sense amplifier as is typicallyused in a flash memory device or some other form of current sensing.When a current is detected, this is an indication that the selectedtransistor 611, 612, or 613 is turned on by the ramping read voltage asdiscussed subsequently.

The sample and hold and comparator circuits 641-643, illustrated ingreater detail in FIG. 7, are coupled to both the selected word line,through word line conditioning circuitry, and a respective currentsensing circuit 631-633. Each sample and hold circuit 641-643 isresponsible for sampling and storing a representation of the voltage atwhich the selected memory cell is currently programmed, as generated bythe word line voltage generator 600. The representation of the voltageis obtained through an attenuator and level shifter circuit 650 that isconnected between the sample and hold and comparator circuits 641-643and the selected word line (e.g., WL15). The attenuator and levelshifter circuit 650 generates a conditioned ramp signal that can be abuffered voltage, a level shifted voltage, a reduced voltage, or acombination of these. The sample and hold and comparator circuits641-643 are also responsible for performing a verify function andgenerating an inhibit signal when they verify that a selected memorycell 611-613 has been programmed to the target V_(t).

During a programming operation, the circuits represented by the blockdiagrams of FIGS. 6 and 7 operate by the word line voltage generator 600receiving a command to generate one or more programming pulses. Theprogramming pulses bias the word line/control gate of a selected cell611 that is to be programmed in order to move the V_(t) of that cell toa target V_(t) voltage. Thereafter, a verify operation is performed todetermine whether the target V_(t) has been reached or if furtherprogramming pulses are needed.

A verify operation can be performed that includes the voltage generator600 generating a ramp voltage that biases the word line/control gate ofthe selected cell 611. The ramp voltage starts at V_(start) (e.g., 0V)and can increase to V_(max) (e.g., 5V).

A second ramp voltage from the attenuator/level shifter 650, which is aconditioned version of the ramp voltage used to bias the selected wordline, is applied to the sample and hold and comparator circuit 641 thatis associated with the selected cell 611. The conditioning of the rampvoltage can be simply buffered, range reduced, level shifted, or anycombination of these.

When the selected memory cell 611 turns on, it creates a bit linecurrent that is detected by the current sense circuit 631. The currentsense circuit 631 generates a control signal upon detection of the bitline current. The control signal instructs the sample and hold andcomparator circuit 641 to store in a data storage device, such as acapacitor 706, an indication of the current voltage level of theconditioned ramp voltage at which the selected cell 611 turned on.

FIG. 7 illustrates a block diagram of one embodiment of one of thesample/hold and comparator circuits 641 of FIG. 6. The other sample/holdand comparator circuits of FIG. 6 that are connected to each bit linecan be substantially the same.

The sample/hold and comparator circuit 641 can be comprised of a readcircuit 700, a verify circuit 701, and a reference circuit 702. Thesample/hold and comparator circuit 641 of FIG. 7 is for purposes ofillustration only as the sample/hold and comparing functions can beaccomplished in many different ways.

The read circuit 700 is comprised of a voltage storage device 706 thatmakes up the sample and hold portion of the circuit 641. The illustratedembodiment uses a capacitor 706 to store the voltage. Alternateembodiments may use other means of voltage storage. The capacitor 706 isconnected to the selected word line ramp voltage through a switch 704.The switch is controlled by the control signal from the sense amplifiercircuit for example. In operation, the selected word line ramp voltageincreases until it reaches the V_(t) that turns on the selected memorycell. During the ramped voltage, the switch is normally closed so thatthe voltage being stored in the capacitor 706 also increases with theinput voltage. When the ramp voltage reaches the V_(t) of the selectedmemory cell, current begins to flow in the bit line. The sense amplifierdetects the current and generates the control signal that opens theswitch 704. The open switch 704 causes an indication of the V_(t) levelthat initiated the current flow to be stored in the capacitor 706. Thisindicates the threshold voltage to which the selected memory cell iscurrently programmed.

The stored threshold voltage indication is output through an NMOStransistor 705 that is connected to a current source 707 through thesource connection of the transistor 705. The drain connection of thetransistor 705 is connected to the supply voltage V_(CC).

The NMOS transistor 705 is connected in a source follower configurationto drive the stored threshold voltage indication, through an outputswitch 708, to the I/O node (e.g., I/O line) of the memory device.During the phase when this particular column is selected, the switch 720is first closed to discharge the I/O line to ground. One switch 720 isthen opened and the output switch 708 is closed to connect the NMOStransistor 705 to the I/O line.

In the present embodiment, the output of the read circuit 700 will notbe the same as the V_(t) representation stored in the capacitor 706.Since the V_(t) representation is applied to the gate of the NMOStransistor 705, the source of the transistor 705 rises to V_(t)-V_(gs)where V_(gs) is the gate-to-source voltage drop of the transistor 705.Thus, if V_(t) is 1.5V and V_(gs) of transistor 705 is 1.0V, then theread circuit will output 0.5V as the read V_(t).

In one embodiment, the memory controller can read the I/O line and,using a translation table stored in memory, determine that 0.3V on theI/O line equates to a V_(t) of 1.0V. The translation table could containa read voltage from the I/O line and its equivalent V_(t) for theselected memory cell. This embodiment assumes that the voltage dropacross the transistor 705 is known and fixed. During this readoperation, the verify circuit 701 is not used.

Another embodiment, as illustrated in FIG. 7, uses a reference circuit702. One such reference circuit 702 is substantially similar to the readcircuit 700 in that it is comprised of a switch controlled by the senseamplifier control signal, a storage capacitor 726, an NMOS transistor725 configured in a source follower configuration with a current source727 on the source connection, and an output switch 728 that is openuntil the V_(t) is stored in the capacitor 726 and the input switch 724is opened.

The reference circuit 702 operates by the memory controller sending acommand to a voltage source, such as the word line voltage generator 600of FIG. 6, to store the representation of the target V_(t) of theselected memory cell in the capacitor 726 of the reference circuit 702.The input switch 724 is then opened by the controller to contain thetarget V_(t) in the capacitor 726. The reference circuit 702 can thendrive this value out, through the output switch 728, to the I/O line. Asdiscussed previously, the I/O line is first discharged by the dischargeswitch 720 so that the output voltage starts at 0V. Even though the samevoltage drop exists across the transistor 725 as in the read circuit700, the memory controller now knows the actual V_(t) that was stored inthe reference circuit 702. When the reference circuit 702 output is readfrom the I/O line by the memory controller, the controller knows theV_(t) value that corresponds to the voltage that was read from the I/Oline. Thus, when the controller reads this same voltage during the timethat the read circuit 700 is driving its voltage onto the I/O line, itknows the Vt that was stored in the read circuit capacitor 706.

The read circuit 700 output and the reference circuit 702 output can bealternately connected to the I/O line by the memory controller duringseparate read cycles. The controller can alternate the closing of therespective output switches 708, 728 of each circuit 700, 702 in order toput the desired output onto the I/O line.

The reference circuit has the added benefit of correcting the readcircuit V_(t) for temperature variations. Since the reference circuitoutput voltage will vary in a similar manner as the read circuit outputand the stored V_(t) value in the reference circuit is known, the memorycontroller can determine the actual V_(t) stored in the read circuit bya translation table stored in memory.

The verify circuit 701 includes a comparator function 715 that, in oneembodiment, is comprised of an operational amplifier configured as acomparator circuit 715. The comparator circuit 715 compares the voltagefrom the read circuit 700 output with the voltage from the verifycircuit 701 output. The comparator circuit 715 then outputs a logicalhigh when the output of the read circuit 700 is substantially equal toor greater than the output of the verify circuit 701. As describedsubsequently, the logical high signal at the INHIBIT pin is used toinhibit programming of the memory cell that has reached its thresholdvoltage.

For operation of the circuit, the voltage to be programmed into the cellis loaded into the sample/hold circuit. This is accomplished by closingswitch 710 so that the incoming data is sampled by the capacitor 711.The switch 710 is then opened and the capacitor 711 now holds the targetdata.

The selected cell is then programmed as described subsequently. Eachprogramming pulse applied to the selected cell moves V_(t) a certainthreshold voltage distance. A read and verify operation is performedbetween each programming pulse to determine if the V_(t) has reached thetarget voltage.

As discussed previously, the read operation is comprised of arepresentation of a ramp voltage being applied to the input of the readcircuit 700 until V_(t) is reached and stored in the capacitor 706. Theoutput of the source follower transistor 705 is then applied to theinput of the comparator circuit 715. If the cell V_(t) is less than thetarget V_(t), the INHIBIT signal indicates (e.g., a logical low signal)that the cell needs an additional program pulse. The above-describedprogramming sequence is then repeated. If the cell V_(t) issubstantially equal to or higher than the target V_(t), the INHIBITsignal indicates (e.g., a logical high signal) that the cell does notneed any further programming pulses and the cell is put into the“inhibit” state.

The “inhibit” state is indicated when the output of the source followertransistor 705 of the read circuit is at least equal to the output ofthe source follower transistor 712 of the verify circuit 701. At thispoint, the comparator circuit 715 outputs an INHIBIT signal. In oneembodiment, the INHIBIT signal is a logical 1. The INHIBIT signal isused to initiate an inhibit function.

The inhibit function can be accomplished using various methods inresponse to a circuit receiving the INHIBIT signal. For example, the bitline bias can be changed from the program enable voltage of 0V, usedduring a programming operation, to V_(CC) that inhibits programming ofmemory cells coupled to that particular bit line. The bit line voltagecan also be varied between 0V and V_(CC) to slow programming instead ofcompletely inhibiting programming.

The representation of the analog ramp voltage for the above embodimentscan be a conditioned version of a selected word line ramp voltage.Conditioning operations include reducing the voltage range (e.g.,dividing the selected word line ramp voltage by 5), level shifting(e.g., shifting the selected word line ramp voltage where −2V to +3Vchanges to +2V to +3V), and buffering.

FIG. 8 illustrates a block diagram of an alternate embodiment of thesample/hold and comparator circuit 641. This circuit is substantiallythe same as the embodiment of FIG. 7 except the capacitor 806 can beswitched between a second signal input and ground.

The embodiment of FIG. 8 shows the second signal input as being a“boost” voltage. This voltage can increase the actual stored V_(t) inthe capacitor in order to compensate for the voltage drop across thesource follower transistor 705. For example, if the transistor 705 has aknown gate-to-source voltage drop of 1.0V, the boost voltage signal canbe 1.0V to compensate. Thus, the output of the read circuit 800 wouldthen be the actual threshold voltage that was read from the memory cell.

FIG. 9 illustrates a flowchart of one embodiment of an analog sensemethod in accordance with the block diagram of FIG. 6.

A target voltage that is representative of the desired voltage (i.e.,target data) that is to be programmed into the selected memory cell isstored in the verify circuit portion of the sample/hold circuit 901. Inan alternate embodiment, the reference circuit is also programmed withthis data. An initial programming pulse is then generated to bias theword line that is connected to the control gate of the selected memorycell 903.

During a typical programming operation, the selected cell is biased by aseries of incrementally increasing programming pulses. A memory celltypically starts the programming operation in an erased state with anegative threshold voltage. Each programming pulse increases thethreshold voltage, V_(t), of the memory cell a certain voltage dependingon the programming voltage pulse level.

The verify operation as described previously is then performed on theselected memory cell 905 to determine if it is programmed to the targetthreshold voltage 911. The verify operation determines if the selectedcell threshold voltage is greater than or equal to the stored targetvoltage.

As described previously, the verify operation includes biasing the wordline with a ramp voltage until the memory cell starts to conduct andproduce a current on the bit line. Once the current sensing circuitdetects the bit line current, it generates a control signal indicatingto the sample/hold circuitry to store an indication of the currentramped read voltage (which could be the current ramped read voltage),that caused the cell to turn on. The stored, target voltage is comparedto the sample and hold voltage from the ramped read voltage in order todetermine if the selected memory cell has been programmed to the targetthreshold voltage 911. In other words, the selected cell is checked todetermine if the target data has been programmed.

If the selected memory cell has been programmed 911, further programmingof the selected cell is inhibited 915. The bit line inhibit can beaccomplished as discussed previously or using some other inhibit method.

If the selected memory cell has not yet reached the target thresholdvoltage 911, the programming voltage is increased 913. Anotherprogramming pulse at the increased programming voltage is then generatedand the process repeated until the threshold voltage of the selectedcell is substantially the same as the stored voltage to be programmed.

CONCLUSION

The embodiments of the present disclosure perform analog sensing ofmemory cells in a memory device, such as a solid state memory device, aNAND flash memory, or some other type of memory device. A sample andhold circuit drives an output signal to the I/O of the memory deviceusing a source follower circuit instead of an operational amplifier asused in the prior art. The source follower circuit provides high speedanalog drive at lower power requirements while using less integratedcircuit real estate than the operational amplifier.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe disclosure will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the disclosure.

1. A method for programming a selected memory cell, the methodcomprising: storing a target threshold voltage into a verify circuit;biasing the selected memory cell with a programming pulse; verifyingwhether the selected memory cell is programmed to the target thresholdvoltage by: reading a current threshold voltage of the selected memorycell into a read circuit having a source follower driver; comparing, tothe target threshold voltage, the current threshold voltage output fromthe read circuit through the source follower driver; and generating anindication of a response to the comparison.
 2. The method of claim 1wherein reading the current threshold voltage comprises: biasing theselected memory cell with a ramp voltage; and storing, in a capacitor ofthe read circuit, the current threshold voltage from the ramp voltage.3. The method of claim 2 wherein storing comprises closing an inputswitch to the read circuit.
 4. The method of claim 1 wherein theindication of the response is an inhibit signal when the currentthreshold voltage is substantially equal to or greater than the targetvoltage.
 5. The method of claim 1 and further including storing thecurrent threshold voltage in a reference circuit for a subsequent readoperation.
 6. The method of claim 1 wherein biasing the selected memorycell comprises biasing a control gate of the selected memory cell. 7.The method of claim 1 wherein generating the indication comprisesgenerating a logical high signal when the current threshold voltageoutput from the read circuit is equal to or greater than the targetthreshold voltage.
 8. The method of claim 1 wherein the indication ofthe response to the comparison is used to inhibit further programming ofthe selected memory cell.
 9. The method of claim 2 wherein the rampvoltage is a conditioned ramp voltage.
 10. The method of claim 9 whereinthe conditioned ramp voltage is one of: buffered, range reduced, levelshifted, or any combination of buffered, range reduced, and levelshifted.
 11. The method of claim 2 and further comprising generating theramp voltage through an attenuator and level shifter.
 12. The method ofclaim 1 and further comprising generating the programming pulse by aword line generator receiving a command to generate one or moreprogramming pulses.
 13. The method of claim 2 wherein the ramp voltagestarts at 0V and increases to 5V.
 14. The method of claim 3 and furtherincluding opening the input switch to the read circuit in response to:detecting a current in a bit line coupled to the selected memory cell;generating a control signal in response to detecting the current; andthe control signal controlling operation of the input switch.
 15. Themethod of claim 2 wherein a voltage storage device in the read circuitstores an indication of the ramp voltage as the ramp voltage increases.16. The method of claim 15 wherein the voltage storage device is acapacitance.
 17. A method for reading a selected memory cell, the methodcomprising: outputting a representation of a read threshold voltage,stored in a read circuit, using a source follower driver, the readthreshold voltage representation being output during a first cycle of aread operation; outputting a representation of a reference thresholdvoltage, stored in a reference circuit, using a source follower driver,the reference voltage being output during a second cycle of the readoperation; and translating the read threshold voltage in response to thereference threshold voltage.
 18. The method of claim 17 whereintranslating the read threshold voltage comprises reading a translationtable stored in memory.
 19. The method of claim 18 wherein thetranslation table comprises a read voltage from an I/O line and itsequivalent threshold voltage for the selected memory cell.
 20. Themethod of claim 17 wherein the read threshold voltage is stored in acapacitor of the read circuit.